In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and mag...

in this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. for a single electron case, the binding energy of on-center donor and acceptor impurities ar...

In this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. For a single electron case, the binding energy of on-center donor and acceptor impurities ar...

In this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. For a single electron case, the binding energy of on-center donor and acceptor impurities ar...

Electronic and structural properties of substitutional group-V donors sN, P, As, Sbd and group-III acceptors sB, Al, Ga, Ind in silicon nanocrystals with hydrogen passivation are explored using first-principles calculations based on hybrid density functional theory with complete geometrical optimization. The bonding near the impurity is similar to that found for the impurity in bulk crystalline...

Using a variational procedure within the effective-mass approximation, we have made a theoretical study of the effects of hydrostatic pressure and applied electric fields on the binding energy of a shallow-donor impurity in square-transversal section GaAs-Ga0.7Al0.3As quantum-well wires. The electric field is applied in a plane of the transversal section of the wire and many angular directions ...

The effect of the bulk Longitudinal-Optical (LO) phonon on the binding energy is investigated for a shallow donor impurity in a superlattice in the effective mass approximation by using the variational approach. The results are obtained as a function of parameters which characterize the superlattice and the position of the impurity center. The results show that the bulk Longitudinal-Optical (LO...

The electron state structure of isolated interstitial O atoms in real InN (containing clusters of InN, clusters of InON and clusters of non-stoichiometric InN:In) is the subject of investigation in this paper. It is shown that for the interstitial O atoms the corresponding symmetry is equivalent to that of an O atom in vacuum if the dielectric permittivity of InN is considered, and therefore th...

In this work using the effective-mass approximation within a variational approach we study the effect of the 3D longitudinal optical phonons on the energy of a shallow donor impurity in a GaAs–(Ga,Al)As quantum-well wire with a magnetic field applied in the wireaxis direction. We obtain the energy of the lower impurity states as a function of the wire radius, the donor position inside the wire,...